发明公开
- 专利标题: Thin film semiconductor device and method of manufacturing same
- 专利标题(中): 薄膜半导体装置及其制造方法本效果
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申请号: EP04004369.7申请日: 2004-02-26
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公开(公告)号: EP1453086A3公开(公告)日: 2006-03-08
- 发明人: Imai, Keitaro , Takayama, Toru , Goto, Yuugo , Maruyama, Junya , Ohno, Yumiko
- 申请人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址: 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: 398 Hase Atsugi-shi, Kanagawa-ken 243-0036 JP
- 代理机构: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权: JP2003053193 20030228; JP2003053243 20030228
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/786 ; H01L21/84
摘要:
To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.
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