公开(公告)号：EP1434263B1

公开(公告)日：2020-02-12

申请号：EP03029236.1

申请日：2003-12-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Maruyama, Junya ,  Ohno, Yumiko ,  Takayama, Toru ,  Goto, Yuugo ,  Yamazaki, Shunpei

IPC分类号： H01L21/68 ,  H01L27/12

公开(公告)号：EP1437683B1

公开(公告)日：2017-03-08

申请号：EP03029021.7

申请日：2003-12-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Akiba, Mai

IPC分类号： G06K19/077

CPC分类号： G06K19/07749 ,  G06K19/077 ,  G06K19/07703 ,  G06Q20/341 ,  G06Q20/40145 ,  G07F7/1008

公开(公告)号：EP1434264A3

公开(公告)日：2017-01-18

申请号：EP03029476.3

申请日：2003-12-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kuwabara, Hideaki ,  Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko ,  Yamazaki, Shunpei

IPC分类号： H01L21/68 ,  H01L21/20 ,  H01L21/762 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L25/50 ,  H01L21/2007 ,  H01L21/76251 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83001 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2224/45099

摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

公开(公告)号：EP1437695B1

公开(公告)日：2013-07-24

申请号：EP03029235.3

申请日：2003-12-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Akiba, Mai

IPC分类号： G07F7/10 ,  G06K19/077

CPC分类号： G06K19/077 ,  G06K19/07703 ,  G06Q20/105 ,  G06Q20/3415 ,  G07F7/1008 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2224/45147

摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

公开(公告)号：EP1432032A3

公开(公告)日：2013-05-22

申请号：EP03029014.2

申请日：2003-12-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Ohno, Yumiko

IPC分类号： H01L25/065 ,  H01L23/373 ,  H01L21/683 ,  H01L21/98 ,  H01L27/12

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer (501) with a thickness of at most 50µm which is separated from a substrate (322) into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50µm which is separated from another substrate to the above device formative layers, and, repeating such transferring process.

公开(公告)号：EP2264771A2

公开(公告)日：2010-12-22

申请号：EP10179105.1

申请日：1999-12-03

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Ohtani, Hisashi ,  Suzawa, Hideomi ,  Takayama, Toru

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L21/336 ,  H01L27/12 ,  H01L21/84 ,  G02F1/1368 ,  H01L29/423

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  G02F2001/136245 ,  G02F2202/105 ,  H01L21/28061 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863

摘要： There is provided a semiconductor device comprising:
a pixel portion comprising an n-channel thin film transistor or a CMOS circuit comprising an n-channel thin film transistor and a p-channel thin film transistor, the n-channel thin film transistor comprising:
a gate electrode, the gate electrode comprising:
a first layer made of a semiconductor film in contact with a gate insulating film;
and
a second layer in contact with the first layer;
a semiconductor layer, the semiconductor layer comprising:
a channel formation region;
a first impurity region of one conductivity type; and
a second impurity region of the one conductivity type between the channel formation region and the first impurity region ; and

wherein a part of the second impurity region overlaps with the first layer through the gate insulating film, and
wherein the second impurity region is in contact with the channel formation region.

公开(公告)号：EP1437683A3

公开(公告)日：2009-07-22

申请号：EP03029021.7

申请日：2003-12-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Akiba, Mai

IPC分类号： G06K19/077

CPC分类号： G06K19/07749 ,  G06K19/077 ,  G06K19/07703 ,  G06Q20/341 ,  G06Q20/40145 ,  G07F7/1008

摘要： It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

公开(公告)号：EP1780589A2

公开(公告)日：2007-05-02

申请号：EP07002101.9

申请日：2000-04-11

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Koyama, Jun ,  Takayama, Toru ,  Hamatani, Toshiji

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅电极和栅极布线，其中，为了实现该目的，本发明的结构是一种半导体装置，在同一衬底上具有像素TFT 设置在显示区域中的驱动电路TFT和设置在显示区域周围的驱动电路TFT，其中，像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过形成有栅极布线的连接器电接触 来自第二导电层，并且连接器设置在像素TFT和驱动器电路TFT的沟道形成区域的外部。

公开(公告)号：EP1437777A2

公开(公告)日：2004-07-14

申请号：EP03028484.8

申请日：2003-12-12

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Maruyama, Junya ,  Takayama, Toru ,  Ohno, Yumiko

IPC分类号： H01L51/20 ,  H01L21/00

CPC分类号： H01L51/524 ,  H01L51/5259 ,  H01L51/56

摘要： It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant.
The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

摘要翻译： 本发明的目的是提供具有防止氧气和湿气到达发光器件的结构的发光器件，并提供其制造方法。 本发明的另一个目的是在不封装干燥剂的情况下以更少的步骤密封发光器件。 本发明提供一种结构，其中像素区域13被包括隔离物（填充物，微小颗粒等）的第一密封材料（具有比第二密封材料更高的粘度）16包围，所述隔离物保持 两个基板，填充有数滴在该区域中展开的透明第二密封材料17a; 并通过使用第一密封材料16和第二密封材料17进行密封。

公开(公告)号：EP1437683A2

公开(公告)日：2004-07-14

申请号：EP03029021.7

申请日：2003-12-16

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Akiba, Mai

IPC分类号： G06K19/077

CPC分类号： G06K19/07749 ,  G06K19/077 ,  G06K19/07703 ,  G06Q20/341 ,  G06Q20/40145 ,  G07F7/1008

摘要： It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

摘要翻译： 该卡具有用于控制显示装置（105）的驱动的薄膜集成电路（IC）（106）。 天线线圈（103）使用电磁感应器从终端设备发送和接收数据，而不接触设备。 用于电路和器件的薄膜晶体管使用多晶半导体膜形成。 电路和器件用塑料基板之间的树脂密封。 采用LCD装置或数字微镜装置作为显示装置。 使用卡片的预订帐户系统也包含独立声明。