发明公开
- 专利标题： COMPLEMENTARY MIS DEVICE
- 专利标题（中）： KOMPLEMENTÄR-MIS-BAUELEMENT
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申请号： EP02786074申请日： 2002-12-10
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公开(公告)号： EP1455393A4公开(公告)日： 2006-01-25
- 发明人: OHMI TADAHIRO , KOTANI KOJI , SUGAWA SH
- 申请人： OHMI TADAHIRO , TOKYO ELECTRON LTD
- 专利权人： OHMI TADAHIRO,TOKYO ELECTRON LTD
- 当前专利权人： OHMI TADAHIRO,TOKYO ELECTRON LTD
- 优先权： JP2001380534 2001-12-13
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/04 ; H01L29/786
摘要：
A CMOS device comprises a structure formed on the (100) face of a silicon substrate and having another crystal face, and a p-channel MOS transistor and an n-channel MOS transistor each having a high-quality gate insulating film formed on the structure by microwave plasma processing and a gate electrode formed on the gate insulating film. The dimensions and shape of the structure are so set that the carrier mobility in the p-channel MOS transistor and that in the N-channel MOS transistor are balanced.
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