发明公开
EP1519409A1 A method of fabrication of a substrate for an epitaxial growth
有权
Verfahren zur Herstellung vonn Substratenfürepitakitisches Wachstum
- 专利标题： A method of fabrication of a substrate for an epitaxial growth
- 专利标题（中）： Verfahren zur Herstellung vonn Substratenfürepitakitisches Wachstum
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申请号： EP03292377.3申请日： 2003-09-26
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公开(公告)号： EP1519409A1公开(公告)日： 2005-03-30
- 发明人: Akatsu, Takeshi , Aulnette, Cécile , Ghyselen, Bruno
- 申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.
- 申请人地址： Parc Technologique des Fontaines 38190 Bernin FR
- 专利权人： S.O.I. Tec Silicon on Insulator Technologies S.A.
- 当前专利权人： S.O.I. Tec Silicon on Insulator Technologies S.A.
- 当前专利权人地址： Parc Technologique des Fontaines 38190 Bernin FR
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/20 ; C30B25/18 ; C30B25/02
摘要：
The present invention relates to a method of fabrication of a substrate for an epitaxial growth, comprising: obtaining a relaxed epitaxial base layer on an auxiliary substrate. It is the object of the present invention to fabricate substrates which allow for more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter, wherein the material can be grown with a high thermodynamic and crystallographic stability. The object is solved by a method of the above-mentioned type which further comprises: transferring at least a part of the epitaxial base layer onto a carrier substrate, forming a base substrate; and further growing of the material of the epitaxial base layer on the carrier substrate.
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