公开(公告)号：EP1519409A1

公开(公告)日：2005-03-30

申请号：EP03292377.3

申请日：2003-09-26

申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.

发明人： Akatsu, Takeshi ,  Aulnette, Cécile ,  Ghyselen, Bruno

IPC分类号： H01L21/762 ,  H01L21/20 ,  C30B25/18 ,  C30B25/02

CPC分类号： H01L21/76254 ,  C30B25/02 ,  C30B29/52 ,  Y10S117/915

摘要： The present invention relates to a method of fabrication of a substrate for an epitaxial growth, comprising: obtaining a relaxed epitaxial base layer on an auxiliary substrate. It is the object of the present invention to fabricate substrates which allow for more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter, wherein the material can be grown with a high thermodynamic and crystallographic stability. The object is solved by a method of the above-mentioned type which further comprises: transferring at least a part of the epitaxial base layer onto a carrier substrate, forming a base substrate; and further growing of the material of the epitaxial base layer on the carrier substrate.

摘要翻译： 本发明涉及一种用于外延生长的衬底的制造方法，包括：在辅助衬底上获得弛豫的外延基底层。 本发明的目的是制造基板，其允许在具有不同晶格参数的另一材料上具有期望的晶格参数的材料的更有效的外延生长，其中该材料可以以高热力学和晶体学稳定性生长。 该目的通过上述类型的方法来解决，该方法还包括：将外延基底层的至少一部分转移到载体衬底上，形成基底; 并且在载体衬底上进一步生长外延基底层的材料。

公开(公告)号：EP1519409B1

公开(公告)日：2008-08-20

申请号：EP03292377.3

申请日：2003-09-26

申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.

发明人： Akatsu, Takeshi ,  Aulnette, Cécile ,  Ghyselen, Bruno

IPC分类号： H01L21/762 ,  H01L21/20 ,  C30B25/18 ,  C30B25/02

CPC分类号： H01L21/76254 ,  C30B25/02 ,  C30B29/52 ,  Y10S117/915