发明公开
- 专利标题： TRANSFER OF A THIN LAYER FROM A WAFER COMPRISING A BUFFER LAYER
- 专利标题（中）： 窗口的薄层具有缓冲层转移
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申请号： EP03762850.0申请日： 2003-07-09
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公开(公告)号： EP1522097A2公开(公告)日： 2005-04-13
- 发明人: GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines,Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines,Chemin des Franques 38190 Bernin FR
- 代理机构： Le Forestier, Eric
- 优先权： FR0208600 20020709
- 国际公布： WO2004006311 20040115
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Method of producing a structure comprising a thin layer of semiconductor material obtained from a wafer (10), the wafer (10) comprising a lattice parameter matching layer (2) comprising an upper layer of semiconductor material having a first lattice parameter, a film (3) of semiconductor material which has a nominal lattice parameter substantially different from the first lattice parameter and is strained by the matching layer (2), a relaxed layer (4) having a nominal lattice parameter substantially identical to the first lattice parameter, the metod comprising transfer of the relaxed layer (4) and the strained film (3) to a receiving substrate (5). Structures produced according to one of the processes according to the invention.
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