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1.发明授权A method of fabricating a composite structure with a stable bonding layer of oxide 有权一种制造复合结构的过程中具有稳定的氧化物结合
公开(公告)号：EP2232545B1
公开(公告)日：2012-05-02
申请号：EP08871508.1
申请日：2008-12-29
IPC分类号： H01L21/762
CPC分类号： B32B37/14 , H01L21/76254 , H01L33/0079 , H01L2924/0002 , Y10T156/10 , Y10T428/265 , H01L2924/00
摘要： The invention concerns a method of fabricating a composite structure (14) comprising at least one thin film (4) bonded to a support substrate (10), a bonding layer of oxide (12) being formed by deposition between the support substrate (10) and the thin film (4). The thin film and the support substrate have a mean thermal expansion coefficient of 7 X 10
-6 K
-1 or more. The bonding layer of oxide (12) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide (12) is equal to or greater than the thickness of the thin film (4).-
公开(公告)号：EP2255395B1
公开(公告)日：2012-04-25
申请号：EP09715749.9
申请日：2009-02-26
发明人： DROUIN, Alexis , ASPAR, Berhard , DESRUMEAUX, Christophe , LEDOUX, Olivier , FIGUET, Christophe
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L31/18 , H01L27/14603
摘要： The invention relates to a method for fabricating a semiconductor substrate comprising the steps of: providing a silicon on insulator type substrate comprising a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over, in particular on, the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular suitable for optoelectronic applications.
摘要翻译： 本发明涉及一种制造半导体衬底的方法，包括以下步骤：提供包括基底，绝缘层和第一半导体层的绝缘体上硅型衬底，掺杂第一半导体层以由此获得改性的第一半导体层， 以及在所述改性的第一半导体层上，尤其在所述改性的第一半导体层上提供具有与所述改性的第一半导体层不同的掺杂剂浓度的第二半导体层。 采用这种方法，可以通过使衬底特别适用于光电应用的各种层来实现改进的掺杂剂浓度分布。
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3.发明授权
公开(公告)号：EP1690289B9
公开(公告)日：2012-03-14
申请号：EP03789586.9
申请日：2003-12-03
发明人： NEYRET, Eric , ARENE, Emmanuel , ECARNOT, Ludovic
IPC分类号： H01L21/324 , H01L21/302 , H01L21/477
CPC分类号： H01L21/3247 , H01L21/02052 , H01L21/76251
摘要： The present invention relates to a process for reducing the roughness of the free surface of a semiconductor wafer, said process comprising a single annealing step for smoothing said free surface, said single annealing step being carried out as a RTA under an atmosphere of pure argon, characterized in that before the RTA the atmosphere of the annealing environment is purged in a controlled manner so as to establish a controlled purged atmosphere allowing reduction of preliminary pollutants on the wafer.
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公开(公告)号：EP1462184B1
公开(公告)日：2012-02-29
申请号：EP04290796.4
申请日：2004-03-25
IPC分类号： B08B3/08 , H01L21/02 , H01L21/20 , H01L21/67 , H01L21/762
CPC分类号： H01L21/02052 , B08B3/08 , B08B2203/005 , H01L21/2007 , H01L21/6704 , H01L21/67057 , H01L21/76251
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5.发明公开A METHOD OF PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THE THERMAL EXPANSION COEFFICIENT 审中-公开一种用于制造异质结构的热膨胀系数之适应当地
公开(公告)号：EP2406818A1
公开(公告)日：2012-01-18
申请号：EP09804133.8
申请日：2009-12-24
发明人： COLNAT, Cyrille
IPC分类号： H01L21/62
CPC分类号： H01L21/2007
摘要： A method of producing a heterostructure (200) comprising bonding at least one first substrate (110) having a first thermal expansion coefficient onto a second substrate (120) having a second thermal expansion coefficient, the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches (111) are formed in one of the two substrates from the bonding surface (110a) of the substrate (110). The trenches (111) are filled with a material (130) having a third thermal expansion coefficient lying between the first and second thermal expansion coefficients.
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6.发明公开STRAIN ENGINEERED COMPOSITE SEMICONDUCTOR SUBSTRATES AND METHODS OF FORMING SAME 审中-公开TENSION骨架复合半导体衬底及其制造方法的
公开(公告)号：EP2377153A1
公开(公告)日：2011-10-19
申请号：EP08875786.9
申请日：2008-12-19
IPC分类号： H01L21/762 , H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254 , H01L33/0079
摘要： Composite substrates are produced that include a strained Ill-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the Ill-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The Ill-nitride material may be formed with a Ga polarity or a N polarity. The desired lattice strain may be developed by forming a buffer layer between the Ill-nitride material and a growth substrate, implanting a dopant or introducing an impurity in the Ill-nitride material to modify its lattice parameter, or forming the Ill-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.
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公开(公告)号：EP1902463B1
公开(公告)日：2011-09-14
申请号：EP06777736.7
申请日：2006-07-12
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/31055 , H01L21/31116
摘要： The invention concerns a method for making a substrate adapted to be used in the field of electronics, optoelectronics and optics, characterized in that it includes at least the following successive steps: a) depositing on a donor substrate (1) an insulating layer (2) whereof the thickness is not less than 20 nm and whereof the roughness is not less than 3 angstroms RMS, for a sweep of 2 νm x 2 νm; b) smoothing treatment (SP) of the free surface (20) of said insulating layer (2), using a gas plasma, formed in a chamber under gas pressure higher than 0.25 Pa, said plasma being generated by means of a radio frequency RF generator, which enables said insulating layer (2) to be imparted with a power density higher than 0.6 W/cm2, the duration of said smoothing treatment being not less than 10 seconds; c) forming a weakened zone (10) by implanting atomic species, inside said donor substrate (1), to delimit therein a so-called 'active' layer (11) and a residue (12).
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公开(公告)号：EP2362860A1
公开(公告)日：2011-09-07
申请号：EP09740335.6
申请日：2009-10-27
CPC分类号： H01L21/31053 , H01L21/76256
摘要： A method of bonding a first substrate (210) on a second substrate (220) by molecular bonding, the method comprising the following steps: • forming a layer of insulation (212) on the bonding face (210a) of the first substrate (210); • chemical -mechanical polishing said layer of insulation (212); • activating the bonding surface of the second substrate (220) by plasma treatment; and • bonding together the two substrates (210, 220) by molecular bonding; the method being characterized in that it further comprises, after the chemical -mechanical polishing step and before the bonding step, a step of etching the surface (212a) of the layer of insulation (212) formed on the first substrate.
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9.发明授权
公开(公告)号：EP1922751B1
公开(公告)日：2011-08-17
申请号：EP06793255.8
申请日：2006-09-06
发明人： HEBRAS, Xavier
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , Y10S438/974
摘要： The invention concerns a method for making a SOI heterostructure, comprising at least one insulating layer (3, 6) interposed between a receiver substrate (2) and an active layer (14), derived from a donor substrate (1), at least one of said insulating layers including a trapping layer (61) for retaining gaseous species present at the different interfaces of the heterostructure and for limiting the formation of defects at the surface of said active layer (14), said method including steps of layer bonding and transferring. The invention is characterized in that, prior to bonding, it consists in forming said trapping layer (61) by implanting at least one category of atomic species inside at least one of the insulating layers (3, 6), said atomic species being selected so as to be identical to one of those constituting said insulating layer (3, 6), or belonging to the same column of the periodic table as one of those.
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公开(公告)号：EP2345067A1
公开(公告)日：2011-07-20
申请号：EP09740907.2
申请日：2009-10-29
发明人： LANDRU, Didier
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Method for producing stacked UTBOX-like semi-conductor structures, said method comprising: a) the formation of an electrical insulator layer on a donor substrate, b) the introduction of elements into the donor substrate through the insulator layer, c) the formation of an electrical insulator layer, on a second substrate known as final substrate, d) the bonding of the two substrates, the two insulator layers limiting the diffusion of water and forming an insulator layer buried between the two substrates, of thickness less than 50 nm, the donor oxide layer having, during the bonding, a thickness at least equal to that of the bonding oxide layer.
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