发明公开
EP1537605A1 NANOTUBE PERMEABLE BASE TRANSISTOR AND METHOD OF MAKING SAME
审中-公开
具有耐诺渗透BASIS和工艺晶体管用于生产
- 专利标题： NANOTUBE PERMEABLE BASE TRANSISTOR AND METHOD OF MAKING SAME
- 专利标题（中）： 具有耐诺渗透BASIS和工艺晶体管用于生产
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申请号： EP03761093.8申请日： 2003-06-17
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公开(公告)号： EP1537605A1公开(公告)日： 2005-06-08
- 发明人: VOGELI, Bernhard , RUECKES, Thomas , SEGAL, Brent, M.
- 申请人： Nantero, Inc.
- 申请人地址： 25-D Olympia Avenue Woburn, MA 01801 US
- 专利权人： Nantero, Inc.
- 当前专利权人： Nantero, Inc.
- 当前专利权人地址： 25-D Olympia Avenue Woburn, MA 01801 US
- 代理机构： Hutchinson, Glenn Stanley
- 优先权： US175586 20020619; US174889 20020619
- 国际公布： WO2004001860 20031231
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
A permeable base transistor (PBT) having a base layer (112) including metallic nanotubes (110) embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter (104E) and collector (104C) layers of the semiconductor material. A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.
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