公开(公告)号：EP1537605A1

公开(公告)日：2005-06-08

申请号：EP03761093.8

申请日：2003-06-17

申请人： Nantero, Inc.

发明人： VOGELI, Bernhard ,  RUECKES, Thomas ,  SEGAL, Brent, M.

IPC分类号： H01L31/109

CPC分类号： H01L51/0575 ,  B82Y10/00 ,  H01L29/7722 ,  H01L51/0048 ,  H01L51/0504

摘要： A permeable base transistor (PBT) having a base layer (112) including metallic nanotubes (110) embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter (104E) and collector (104C) layers of the semiconductor material. A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.

公开(公告)号：EP1609188A2

公开(公告)日：2005-12-28

申请号：EP04758373.7

申请日：2004-03-26

申请人： Nantero, Inc.

发明人： RUECKES, Thomas ,  SEGAL, Brent, M. ,  VOGELI, Bernhard ,  BROCK, Darren, K. ,  JAIPRAKASH, Venkatachalam, C. ,  BERTIN, Claude L.

IPC分类号： H01L29/84

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  G11C2213/17 ,  H01L27/112 ,  H01L27/11233 ,  H01L27/115 ,  H01L27/11521 ,  H01L51/0048 ,  H01L51/0052

摘要： Nanotube on gate NhT structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.

公开(公告)号：EP1623203A2

公开(公告)日：2006-02-08

申请号：EP04809372.8

申请日：2004-05-12

申请人： Nantero, Inc.

发明人： SEGAL, Brent, M. ,  RUECKES, Thomas ,  VOGELI, Bernhard ,  BROCK, Darren ,  JAIPRAKASH, Venkatachalam, C.

IPC分类号： G01N1/00

CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element’s electrical characterization. Under certain embodiments, the sensor element comprises prederivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

公开(公告)号：EP1634296A2

公开(公告)日：2006-03-15

申请号：EP04754836.7

申请日：2004-06-09

申请人： Nantero, Inc.

发明人： BERTIN, Claude, L. ,  RUECKES, Thomas ,  SEGAL, Brent, M. ,  VOGELI, Bernhard ,  BROCK, Darren, K. ,  JAIPRAKASH, Venkatachalam, C.

IPC分类号： G11C11/00 ,  G11C11/50

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.

公开(公告)号：EP1631812A2

公开(公告)日：2006-03-08

申请号：EP04775994.9

申请日：2004-05-12

申请人： Nantero, Inc.

发明人： SEGAL, Brent, M. ,  RUECKES, Thomas ,  VOGELI, Bernhard ,  BROCK, Darren ,  JAIPRAKASH, Venkatachalam, C.

IPC分类号： G01N1/00

CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.