发明授权
- 专利标题： PROCEDE DE FABRICATION DE NANO-STRUCTURE FILAIRE DANS UN FILM SEMI-CONDUCTEUR.
- 专利标题（英）： Method for making a wire nanostructure in a semiconductor film
- 专利标题（中）： 制造方法线状性纳米结构从半导体层
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申请号： EP03780284.0申请日： 2003-10-02
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公开(公告)号： EP1547136B1公开(公告)日： 2009-12-30
- 发明人: FRABOULET, David , GAUTIER, Jacques , TONNEAU, Didier , CLEMENT, Nicolas , BOUCHIAT, Vincent
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 申请人地址： 25, rue Leblanc Immeuble "Le Ponant D" 75015 Paris FR
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： 25, rue Leblanc Immeuble "Le Ponant D" 75015 Paris FR
- 代理机构： Poulin, Gérard
- 优先权： FR0212235 20021003
- 国际公布： WO2004032182 20040415
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/321 ; H01L23/525
摘要：
The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits.
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