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公开(公告)号：EP0980588B1
公开(公告)日：2003-02-26
申请号：EP98924367.0
申请日：1998-05-04
发明人： GAUTIER, Jacques , MARTIN, François
IPC分类号： H01L29/76
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/7613 , H01L29/7888 , Y10S438/962 , Y10S977/937
摘要： The invention concerns a device with quantic effect, the functioning of which uses Coulomb blockade phenomenon, comprising: first and second electron reservoirs (12, 14); at least first and second island assemblies (16, 18) separated by a dielectric layer; an protective insulating layer (20) and a control electrode (22).
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2.发明授权
公开(公告)号：EP1042818B1
公开(公告)日：2006-06-14
申请号：EP98962496.0
申请日：1998-12-17
发明人： GAUTIER, Jacques , PALUN, Lionel
IPC分类号： H01L29/788 , H01L29/51
CPC分类号： B82Y10/00 , G11C11/5635 , G11C11/5671 , G11C2216/08 , H01L29/7882 , H01L29/7888
摘要： The invention concerns a multilevel memory device with Coulomb barrier comprising a MOSFET with floating grid. The dielectric (32) separating the floating grid (20) from the control grid (28) comprises a plurality of nanometric conducting islands (34) forming a three-dimensional structure (30) wherein they are evenly distributed.
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3.发明公开
公开(公告)号：EP1547136A2
公开(公告)日：2005-06-29
申请号：EP03780284.0
申请日：2003-10-02
IPC分类号： H01L21/306 , H01L21/321 , H01L23/525
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , Y10S977/762
摘要： The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits.
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4.发明公开
公开(公告)号：EP1042818A1
公开(公告)日：2000-10-11
申请号：EP98962496.0
申请日：1998-12-17
发明人： GAUTIER, Jacques , PALUN, Lionel
IPC分类号： H01L29/788 , H01L29/51
CPC分类号： B82Y10/00 , G11C11/5635 , G11C11/5671 , G11C2216/08 , H01L29/7882 , H01L29/7888
摘要： The invention concerns a multilevel memory device with Coulomb barrier comprising a MOSFET with floating grid. The dielectric (32) separating the floating grid (20) from the control grid (28) comprises a plurality of nanometric conducting islands (34) forming a three-dimensional structure (30) wherein they are evenly distributed.
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5.发明授权
公开(公告)号：EP1547136B1
公开(公告)日：2009-12-30
申请号：EP03780284.0
申请日：2003-10-02
IPC分类号： H01L21/306 , H01L21/321 , H01L23/525
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , Y10S977/762
摘要： The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits.
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公开(公告)号：EP0980588A1
公开(公告)日：2000-02-23
申请号：EP98924367.0
申请日：1998-05-04
发明人： GAUTIER, Jacques , MARTIN, François
IPC分类号： H01L29/76
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/7613 , H01L29/7888 , Y10S438/962 , Y10S977/937
摘要： The invention concerns a device with quantic effect, the functioning of which uses Coulomb blockade phenomenon, comprising: first and second electron reservoirs (12, 14); at least first and second island assemblies (16, 18) separated by a dielectric layer; an protective insulating layer (20) and a control electrode (22).
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