发明授权
EP1550164B1 MOSFETS INCORPORATING NICKEL GERMANOSILICIDED GATE AND METHODS OF THEIR FORMATION
有权
与镍GERMANOSILIZIERTEM GATE及其生产方法的MOSFET
- 专利标题： MOSFETS INCORPORATING NICKEL GERMANOSILICIDED GATE AND METHODS OF THEIR FORMATION
- 专利标题（中）： 与镍GERMANOSILIZIERTEM GATE及其生产方法的MOSFET
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申请号： EP03752303.2申请日： 2003-09-12
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公开(公告)号： EP1550164B1公开(公告)日： 2012-04-18
- 发明人: PATON, Eric, N. , XIANG, Qi , BESSER, Paul, R. , LIN, Ming-Ren , NGO, Minh, Van , WANG, Haihong
- 申请人： ADVANCED MICRO DEVICES, INC.
- 申请人地址： One AMD Place Mail Stop 68 P.O. Box 3453 Sunnyvale CA 94088-3453 US
- 专利权人： ADVANCED MICRO DEVICES, INC.
- 当前专利权人： ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址： One AMD Place Mail Stop 68 P.O. Box 3453 Sunnyvale CA 94088-3453 US
- 代理机构： Picker, Madeline Margaret
- 优先权： US415179P 20020930; US335492 20021231
- 国际公布： WO2004038807 20040506
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/28 ; H01L29/49
摘要：
A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide (62, 64) that preferably comprises the monosilicide phase of nickel silicide. The inclusion of germanium in the silicide provides a wider temperature range within which the monosilicide phase may be formed, while essentially preserving the superior sheet resistance exhibited by nickel monosilicide. As a result, the nickel germanosilicide is capable of withstanding greater temperatures during subsequent processing than nickel monosilicide, yet provides approximately the same sheet resistance and other beneficial properties as nickel monosilicide.
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