发明公开
EP1551059A2 Semiconductor device with modified mobility and thin film transistor having the same
审中-公开
Halbleiterbauelement mitveränderterLadungsträgerbeweglichkeitund dieses verwendenderDünnschichttistor
- 专利标题: Semiconductor device with modified mobility and thin film transistor having the same
- 专利标题(中): Halbleiterbauelement mitveränderterLadungsträgerbeweglichkeitund dieses verwendenderDünnschichttistor
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申请号: EP04257956.5申请日: 2004-12-20
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公开(公告)号: EP1551059A2公开(公告)日: 2005-07-06
- 发明人: Kwon, Jang-yeon , Noguchi, Takashi , Park, Young-soo , Kim, Do-young
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: 416, Maetan-3 dong, Yeongtong-gu Suwon-si, Gyeonggi-cho KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: 416, Maetan-3 dong, Yeongtong-gu Suwon-si, Gyeonggi-cho KR
- 代理机构: Greene, Simon Kenneth
- 优先权: KR2003100494 20031230
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/786
摘要:
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
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