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    Transistor, method of manufacturing the transistor and electronic device including the transistor
    2.
    发明公开
    Transistor, method of manufacturing the transistor and electronic device including the transistor 有权
    晶体管，Verfahren zur Herstellung des Transistors und elektronische Vorrichtung damit

    公开(公告)号：EP2330629A1

    公开(公告)日：2011-06-08

    申请号：EP10193027.9

    申请日：2010-11-29

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jung, Ji-sim ,  Lee, Chang-seung ,  Le, Jae-cheol ,  Lee, Sang-yoon ,  Kwon, Jang-yeon ,  Lee, Kwang-hee ,  Son, Kyoung-seok

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

    摘要翻译： 提供晶体管，晶体管的制造方法以及包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次堆叠的氧化硅层，氧氮化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

    ZnO-based thin film transistor and method of manufacturing the same
    5.
    发明公开
    ZnO-based thin film transistor and method of manufacturing the same 审中-公开
    ZnO基薄膜晶体管及其制造方法

    公开(公告)号：EP2362424A1

    公开(公告)日：2011-08-31

    申请号：EP11166765.5

    申请日：2008-01-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ryu, Myung-kwan ,  Kim, Jun-seong ,  Lee, Sang-yoon ,  Hwang, Euk-che ,  Kim, Tae-sang ,  Kwon, Jang-yeon ,  Park, Kyung-bae ,  Son, Kyung-seok ,  Jung, Ji-sim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869

    摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (CI) in the plasma gas during the patterning of the channel layer.

    摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及制造该TFT的方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO更高的键能。 ZnCl遍及整个沟道层形成，具体而言形成在沟道层的表面附近的区域。 由于ZnCl足够强并且在暴露于等离子体蚀刻气体时不会分解，所以可以防止载流子浓度的增加。 通道层中ZnCl的分布可能是由于在沟道层的图案化期间在等离子体气体中包含氯气（CI）。