发明公开
- 专利标题： LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION
- 专利标题（中）： 具有低GIDL和方法MOSFET结构
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申请号： EP04702490.6申请日： 2004-01-15
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公开(公告)号： EP1588403A2公开(公告)日： 2005-10-26
- 发明人: RADENS, Carl , DOKUMACI, Omer, H. , DORIS, Bruce, B. , GLUSCHENKOV, Oleg , MANDELMAN, Jack, A.
- 申请人： International Business Machines Corporation
- 申请人地址： New Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： New Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Ling, Christopher John
- 优先权： US345472 20030115
- 国际公布： WO2004066367 20040805
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A low-GIRL current MOSFET device (90) structure and a method of fabrication thereof which provides a low-GIRL current. The MOSFET device structure contains a central gate conductor (10) whose edges may slightly overlap the source/drain diffusions (88, 88), and left and right side wing gate conductors (70,70) which are separated from the central gate conductor by a thin insulating and diffusion barrier layer (50, 52).
公开/授权文献
- EP1588403B1 LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION 公开/授权日：2012-03-28
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