发明公开
- 专利标题： PROCEDE DE REVETEMENT D UNE SURFACE, FABRICATION D'INTERCONNEXIONS EN MICROELECTRONIQUE UTILISANT CE PROCEDE, ET CIRCUITS INTEGRES
- 专利标题（英）： Surface-coating method, production of microelectronic interconnections using said method and integrated circuits
- 专利标题（中）： 表面涂装工艺，生产微型电子连接通过方法和集成电路
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申请号： EP04710910.3申请日： 2004-02-13
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公开(公告)号： EP1602128A2公开(公告)日： 2005-12-07
- 发明人: BUREAU, Christophe , HAUMESSER, Paul-Henri , MAITREJEAN, Sylvain , MOURIER, Thierry
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE , Alchimer S.A.
- 申请人地址： 31-33, rue de la Fédération 75752 Paris Cédex 15 FR
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE,Alchimer S.A.
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE,Alchimer S.A.
- 当前专利权人地址： 31-33, rue de la Fédération 75752 Paris Cédex 15 FR
- 代理机构： Poulin, Gérard
- 优先权： FR0301873 20030217
- 国际公布： WO2004075248 20040902
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H05K3/18 ; H05K3/24 ; C23C18/18 ; H05K3/38 ; C23C18/28 ; H05K3/10
摘要：
The invention relates to a method of coating a surface of a substrate with a nucleation film made from a metal material, said surface being a conducting or semiconducting surface and comprising recesses and/or protrusions. The inventive method consists in: depositing an organic film on the surface, the thickness of said film being such that the free face thereof conformally follows the recesses and/or protrusions of the conducting or semiconducting surface on which it is deposited; inserting a precursor of the metal material into the organic film deposited on the surface, simultaneously with or following the step consisting in depositing the organic film on said surface; and transforming the precursor of the metal material into the metal material. The inventive method can be used for the production of integrated circuits, microelectronic interconnections and microsystems.
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