发明公开
- 专利标题: Non-volatile memory and its sensing method
- 专利标题(中): 非易失性存储器和读出过程
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申请号: EP05077014.8申请日: 2003-09-23
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公开(公告)号: EP1610335A3公开(公告)日: 2008-08-06
- 发明人: Cernea, Raul-Adrian , Li, Yan
- 申请人: SanDisk Corporation
- 申请人地址: 140 Caspian Court Sunnyvale, CA 94089 US
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: 140 Caspian Court Sunnyvale, CA 94089 US
- 代理机构: Hitchcock, Esmond Antony
- 优先权: US254830 20020924; US665828 20030917
- 主分类号: G11C16/28
- IPC分类号: G11C16/28 ; G11C11/56 ; G11C16/26 ; G11C7/06
摘要:
A non-volatile memory has a plurality of sense amplifiers for sensing a group of memory storage units in parallel, each of said plurality of sense amplifiers having properties dependent on operating environment and a set of control signals. A reference circuit having elements with properties representative of a typical member of the sense amplifiers is located in a common operating environment with the sense amplifiers. In use, the set of control signals, responsive to said elements operating in the operating environment, is generated such that the sense amplifiers are controlled to have their properties substantially insensitive to the operating environment.
公开/授权文献
- EP1610335B1 Non-volatile memory and its sensing method 公开/授权日:2011-11-09
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