发明公开
EP1611599A4 SYSTEM, METHOD AND APPARATUS FOR IMPROVED LOCAL DUAL-DAMASCENE PLANARIZATION
审中-公开
系统,方法和设备改进局部双镶嵌平面化
- 专利标题: SYSTEM, METHOD AND APPARATUS FOR IMPROVED LOCAL DUAL-DAMASCENE PLANARIZATION
- 专利标题(中): 系统,方法和设备改进局部双镶嵌平面化
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申请号: EP04719319申请日: 2004-03-10
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公开(公告)号: EP1611599A4公开(公告)日: 2007-06-13
- 发明人: LOHOKARE SHRIKANT P , BAILEY ANDREW D III , HEMKER DAVID , COOK JOEL M
- 申请人: LAM RES CORP
- 专利权人: LAM RES CORP
- 当前专利权人: LAM RES CORP
- 优先权: US39052003 2003-03-14
- 主分类号: H01L21/321
- IPC分类号: H01L21/321 ; H01L21/3105 ; H01L21/3213 ; H01L21/768
摘要:
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
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