发明公开
- 专利标题: Substrate dividing method
- 专利标题(中): 为底物的分离方法
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申请号: EP05077646.7申请日: 2003-03-06
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公开(公告)号: EP1632997A2公开(公告)日: 2006-03-08
- 发明人: Fujii, Yoshimaro , Fukuyo, Fumitsugu , Fukumitsu, Kenshi , Uchiyama, Naoki
- 申请人: HAMAMATSU PHOTONICS K. K.
- 申请人地址: 1126-1, Ichino-cho Hamamatsu-shi, Shizuoka 435-8558 JP
- 专利权人: HAMAMATSU PHOTONICS K. K.
- 当前专利权人: HAMAMATSU PHOTONICS K. K.
- 当前专利权人地址: 1126-1, Ichino-cho Hamamatsu-shi, Shizuoka 435-8558 JP
- 代理机构: Frost, Alex John
- 优先权: JP2002067289 20020312
- 主分类号: H01L21/78
- IPC分类号: H01L21/78
摘要:
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
公开/授权文献
- EP1632997B1 Substrate dividing method 公开/授权日:2007-05-16
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