发明公开
- 专利标题： PROCEDE PERFECTIONNE DE RECUIT DE STABILISATION
- 专利标题（英）： Improved annealing method for stabilisation
- 专利标题（中）： 结构稳定性改进的加热方法
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申请号： EP04767314.0申请日： 2004-06-10
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公开(公告)号： EP1639633A2公开(公告)日： 2006-03-29
- 发明人: SCHWARZENBACH, Walter , WAECHTER, Jean-Marc
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 代理机构： Callon de Lamarck, Jean-Robert
- 优先权： FR0306920 20030610
- 国际公布： WO2004112124 20041223
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The invention relates to a thermal treatment method for stabilising a multilayer wafer formed from materials selected from semiconductor materials and comprising two wafers which are connected by means of a connecting interface. According to said method, the temperature is increased to an end-of-treatment temperature, said temperature increase being carried out with at least one constant stage.
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