发明公开
EP1649510A2 DUAL DAMASCENE INTERCONNECT STRUCTURES HAVING DIFFERENT MATERIALS FOR LINE AND VIA CONDUCTORS
审中-公开
与管理和接触孔导体中的不同材料双镶嵌相关结构
- 专利标题： DUAL DAMASCENE INTERCONNECT STRUCTURES HAVING DIFFERENT MATERIALS FOR LINE AND VIA CONDUCTORS
- 专利标题（中）： 与管理和接触孔导体中的不同材料双镶嵌相关结构
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申请号： EP04741743.1申请日： 2004-06-14
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公开(公告)号： EP1649510A2公开(公告)日： 2006-04-26
- 发明人: GAMBINO, Jeffrey , COONEY, Edward, III , STAMPER, Anthony , MOTSIFF, Thomas , LANE, Michael , SIMON, Andrew
- 申请人： International Business Machines Corporation
- 申请人地址： New Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： New Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Waldner, Philip
- 优先权： US604026 20030623
- 国际公布： WO2004114395 20041229
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
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