发明公开
- 专利标题: SINGLE PHASE FLUID IMPRINT LITHOGRAPHY METHOD
- 专利标题(中): EINZELPHASENLFUID压印光刻法
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申请号: EP04817123申请日: 2004-09-24
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公开(公告)号: EP1667778A4公开(公告)日: 2009-04-22
- 发明人: MCMACKIN IAN M , BABBS DANIEL A , VOTH DUANE J , WATTS MICHAEL P C , TRUSKETT VAN N , XU FRANK Y , VOISIN RONALD D , LAD PANKAJ B , STACEY NICHOLAS
- 申请人: MOLECULAR IMPRINTS INC , UNIV TEXAS
- 专利权人: MOLECULAR IMPRINTS INC,UNIV TEXAS
- 当前专利权人: MOLECULAR IMPRINTS INC,UNIV TEXAS
- 优先权: US67763903 2003-10-02
- 主分类号: B01D19/00
- IPC分类号: B01D19/00 ; B29C59/02 ; C23F1/00 ; G03F20060101 ; G03F7/00
摘要:
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying the transport of gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
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