发明公开
- 专利标题: Method for operating a NROM memory device
- 专利标题(中): 用于操作NROM存储器件的方法
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申请号: EP06100056.8申请日: 2006-01-04
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公开(公告)号: EP1679721A3公开(公告)日: 2007-08-08
- 发明人: Maayan, Eduardo , Eitan, Boaz
- 申请人: Saifun Semiconductors Ltd.
- 申请人地址: P.O. Box 8385 42505 Netanya IL
- 专利权人: Saifun Semiconductors Ltd.
- 当前专利权人: Saifun Semiconductors Ltd.
- 当前专利权人地址: P.O. Box 8385 42505 Netanya IL
- 代理机构: Andersson, Björn E.
- 优先权: US29380 20050106
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/04
摘要:
A method and a system for operating bits of memory cells in a memory array, the method including applying a first operating pulse to a terminal of a first cell, the first operating pulse is intended to place the first cell into a predefined state; and applying a second operating pulse to a terminal of a second cell in the set, the second operating pulse is intended to place the second cell to the predefined state, and the pulse characteristics of the second operating pulse are a function of the response of the first cell to the first operating pulse.
公开/授权文献
- EP1679721A2 Method for operating a NROM memory device 公开/授权日:2006-07-12
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