发明授权
- 专利标题: FOTODETEKTOR MIT TRANSIMPEDANZ-VERSTÄRKER UND AUSWERTEELEKTRONIK IN MONOLITHISCHER INTEGRATION UND HERSTELLUNGSVERFAHREN
- 专利标题(英): Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
- 专利标题(中): 在单片集成和方法互阻抗放大器和评估电子光电探测器
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申请号: EP04802880.7申请日: 2004-12-06
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公开(公告)号: EP1690298B1公开(公告)日: 2008-08-13
- 发明人: BACH, Konrad , HOELKE, Alexander , ECKOLDT, Uwe , EINBRODT, Wolfgang , STAHL, Karl-Ulrich
- 申请人: X-FAB Semiconductor Foundries AG , Melexis GmbH
- 申请人地址: Haarbergstrasse 67 99097 Erfurt DE
- 专利权人: X-FAB Semiconductor Foundries AG,Melexis GmbH
- 当前专利权人: X-FAB Semiconductor Foundries AG,Melexis GmbH
- 当前专利权人地址: Haarbergstrasse 67 99097 Erfurt DE
- 代理机构: Leonhard, Frank Reimund
- 优先权: DE10357135 20031206
- 国际公布: WO2005057667 20050623
- 主分类号: H01L31/10
- IPC分类号: H01L31/10 ; H01L31/0224 ; H01L31/02 ; H01L27/144
摘要:
The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities in detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
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