发明公开
- 专利标题： HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
- 专利标题（中）： WITH氮化镓表面粗糙化高效LEDS
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申请号： EP03819251.4申请日： 2003-12-09
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公开(公告)号： EP1697983A1公开(公告)日： 2006-09-06
- 发明人: FUJII, Tetsuo , GAO, Yan , HU, Evelyn, L. , NAKAMURA, Shuji
- 申请人： The Regents of the University of California
- 申请人地址： 1111 Franklin Street, 12th Floor Oakland, CA 94607 US
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： 1111 Franklin Street, 12th Floor Oakland, CA 94607 US
- 代理机构： Paget, Hugh Charles Edward
- 国际公布： WO2005064666 20050714
- 主分类号： H01L21/465
- IPC分类号： H01L21/465 ; H01L29/06 ; H01L29/20 ; H01L33/00
摘要：
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
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