专利检索 ap:("The Regents of the University of California") AND inv:"HU, Evelyn, L." 第 1 页

1.

发明授权
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES HAVING SURFACE ROUGHENING 有权
标题翻译： WITH氮化镓表面粗糙化高效LEDS

公开(公告)号：EP1697983B1

公开(公告)日：2012-06-13

申请号：EP03819251.4

申请日：2003-12-09

申请人： The Regents of The University of California , Japan Science and Technology Agency

发明人： FUJII, Tetsuo , GAO, Yan , HU, Evelyn, L. , NAKAMURA, Shuji

IPC分类号： H01L33/32 , H01L33/22 , H01L33/00 , H01L21/465 , H01L29/06 , H01L29/20

CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/60 , H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

2.

发明公开
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING 有权
标题翻译： WITH氮化镓表面粗糙化高效LEDS

公开(公告)号：EP1697983A1

公开(公告)日：2006-09-06

申请号：EP03819251.4

申请日：2003-12-09

申请人： The Regents of the University of California

发明人： FUJII, Tetsuo , GAO, Yan , HU, Evelyn, L. , NAKAMURA, Shuji

IPC分类号： H01L21/465 , H01L29/06 , H01L29/20 , H01L33/00

CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/60 , H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

3.

发明公开
PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GAN-BASED LIGHT EMITTING DIODES 审中-公开
标题翻译：与多达SANTANDER SHOW P-PAGE的LED的GaN PHOTO电化学粗面化

公开(公告)号：EP2286148A1

公开(公告)日：2011-02-23

申请号：EP09747369.8

申请日：2009-05-12

申请人： The Regents of the University of California

发明人： TAMBOLI, Adele , HU, Evelyn, L. , DENBAARS, Steven, P. , NAKAMURA, Shuji

IPC分类号： F21V33/00 , H01L33/00

CPC分类号： H01L33/22 , H01L33/32

摘要： A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.

4.

发明公开
CONTROL OF PHOTOELECTROCHEMICAL (PEC) ETCHING BY MODIFICATION OF THE LOCAL ELECTROCHEMICAL POTENTIAL OF THE SEMICONDUCTOR STRUCTURE RELATIVE TO THE ELECTROLYTE 审中-公开
标题翻译： PHOTO电化学蚀刻通过修改的半导体结构的局部电化学电位相对于电解质CONTROL

公开(公告)号：EP1815504A1

公开(公告)日：2007-08-08

申请号：EP05851344.1

申请日：2005-11-02

申请人： The Regents of the University of California

发明人： HU, Evelyn, L. , NAKAMURA, Shuji , HABERER, Elaine, D. , SHARMA, Rajat

IPC分类号： H01L21/3063 , H01S5/125 , H01L33/00 , H01S5/10 , H01S5/323

CPC分类号： H01L21/30635 , B82Y20/00 , H01L33/10 , H01S5/1075 , H01S5/18316 , H01S5/2081 , H01S5/34333 , H01S2304/12

摘要： A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.