发明公开
- 专利标题: DIREKTE JUSTIERUNG IN MASKALIGNERN
- 专利标题(英): Direct alignment in mask aligners
- 专利标题(中): 直接调谐MASKALIGNERN
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申请号: EP04803270.0申请日: 2004-11-25
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公开(公告)号: EP1700169A1公开(公告)日: 2006-09-13
- 发明人: HÜLSMANN, Thomas, Dr. , HAENEL, Wolfgang , STIEVENARD, Philippe
- 申请人: Süss MicroTec Lithography GmbH
- 申请人地址: Schleissheimer Strasse 90 85748 Garching DE
- 专利权人: Süss MicroTec Lithography GmbH
- 当前专利权人: Süss MicroTec Lithography GmbH
- 当前专利权人地址: Schleissheimer Strasse 90 85748 Garching DE
- 代理机构: Vossius & Partner
- 优先权: DE10355681 20031128
- 国际公布: WO2005052695 20050609
- 主分类号: G03F9/00
- IPC分类号: G03F9/00
摘要:
The invention relates to a method for aligning two flat substrates with one another each having at least one aligning mark for mutual alignment, particularly for aligning a mark with a wafer before exposure. This method comprises a first aligning step in which both substrates are aligned by optically determining the position of the aligning mark of the first substrate, the position of the first substrate is stored, and the second substrate is displaced parallel to the first substrate so that the adjusting mark of the second substrate corresponds with the stored position of the aligning mark of the first substrate. In a second aligning step, the alignment is verified and a fine adjustment is carried out if necessary. In this second step, the aligning marks of both substrates are observed, in essence, simultaneously, and both substrates are aligned with one another by a relative movement parallel to the substrate plane.
公开/授权文献
- EP1700169B1 DIREKTE JUSTIERUNG IN MASKALIGNERN 公开/授权日:2008-08-20
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