A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film (70) containing at least a lead component to form a dielectric precursor film (71); a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140°C to 170°C, the degreasing step is performed at a degreasing temperature of 350°C to 450°C and at a heating-up rate of 15 [°C/sec] or higher, and the sintering step is performed at a heating-up rate of 100 [°C/sec] to 150 [°C/sec].