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1.发明公开Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus 审中-公开一种用于生产压电元件产生的电介质膜，处理过程中，一种用于制造喷液头，一个介电膜，压电元件和液体喷射装置
公开(公告)号：EP1708290A3
公开(公告)日：2007-01-31
申请号：EP06006723.8
申请日：2006-03-30
CPC分类号： H01L41/318 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , C23C18/1216 , C23C18/1283 , H01L41/0973 , H01L41/1876 , Y10T29/42 , Y10T29/435 , Y10T29/49155
摘要： A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film (70) containing at least a lead component to form a dielectric precursor film (71); a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140°C to 170°C, the degreasing step is performed at a degreasing temperature of 350°C to 450°C and at a heating-up rate of 15 [°C/sec] or higher, and the sintering step is performed at a heating-up rate of 100 [°C/sec] to 150 [°C/sec].
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2.发明公开Method for producing dielectric film, method for producing piezoelectric element, method for producing liquid-jet head, dielectric film, piezoelectric element, and liquid-jet apparatus 审中-公开一种用于生产压电元件产生的电介质膜，处理过程中，一种用于制造喷液头，一个介电膜，压电元件和液体喷射装置
公开(公告)号：EP1708290A2
公开(公告)日：2006-10-04
申请号：EP06006723.8
申请日：2006-03-30
CPC分类号： H01L41/318 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , C23C18/1216 , C23C18/1283 , H01L41/0973 , H01L41/1876 , Y10T29/42 , Y10T29/435 , Y10T29/49155
摘要： A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film (70) containing at least a lead component to form a dielectric precursor film (71); a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140°C to 170°C, the degreasing step is performed at a degreasing temperature of 350°C to 450°C and at a heating-up rate of 15 [°C/sec] or higher, and the sintering step is performed at a heating-up rate of 100 [°C/sec] to 150 [°C/sec].
摘要翻译： 一种生产电介质电影的方法，包括：涂布含有包含构成一个电介质薄膜 - （70）含有至少一个引线组件，以形成电介质前体的电影（71）的金属的有机金属化合物的胶体溶液的涂布工序; 干燥所述电介质前体成膜的干燥工序; 除油电介质前体成膜的脱脂步骤; 和烧结所述电介质前体的烧结工序的膜，以形成介电膜，电影，和worin干燥步骤包括将电介质前体电影加热至高于溶剂的沸点以上的温度的第一干燥步骤中，所有这是主要溶剂 的材料，并且保持所述电介质前体的电影在该温度下的一定时间以干燥该电介质前体的电影，并干燥该电介质前体薄膜在140℃范围内的温度到170℃的第二干燥工序 中，脱脂步骤是在350℃的脱脂温度至450℃，并以15 [℃/秒]或更高，并且烧结步骤在100升温速率进行加热式速率进行 [℃/秒至150℃/秒]。
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