发明授权
EP1711948B1 VARIABLE CURRENT SINKING FOR COARSE/FINE PROGRAMMING OF NON-VOLATILE MEMORY
有权
可变电流宿粗/非挥发性存储器精细编程
- 专利标题： VARIABLE CURRENT SINKING FOR COARSE/FINE PROGRAMMING OF NON-VOLATILE MEMORY
- 专利标题（中）： 可变电流宿粗/非挥发性存储器精细编程
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申请号： EP05711926.5申请日： 2005-01-25
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公开(公告)号： EP1711948B1公开(公告)日： 2011-10-05
- 发明人: GUTERMAN, Daniel, C. , MOKHLESI, Nima , FONG, Yupin
- 申请人： SanDisk Corporation
- 申请人地址： 140 Caspian Court Sunnyvale, CA 94089 US
- 专利权人： SanDisk Corporation
- 当前专利权人： SanDisk Corporation
- 当前专利权人地址： 140 Caspian Court Sunnyvale, CA 94089 US
- 代理机构： Tothill, John Paul
- 优先权： US766786 20040127
- 国际公布： WO2005073977 20050811
- 主分类号： G11C16/00
- IPC分类号： G11C16/00 ; G11C16/10 ; G11C11/56
摘要：
A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
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