发明公开
- 专利标题: PROGRAMMING NON-VOLATILE MEMORY
- 专利标题(中): 编程非易失性存储器
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申请号: EP05705363.9申请日: 2005-01-10
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公开(公告)号: EP1711950A1公开(公告)日: 2006-10-18
- 发明人: HEMINK, Gertjan , FONG, Yupin
- 申请人: SanDisk Corporation
- 申请人地址: 140 Caspian Court Sunnyvale, CA 94089 US
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: 140 Caspian Court Sunnyvale, CA 94089 US
- 代理机构: Tothill, John Paul
- 优先权: US761620 20040121
- 国际公布: WO2005073981 20050811
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C11/56
摘要:
One or more programming operations are performed on a set of non-volatile storage elements. For example, the programming operations may include applying a set of programming pulses. A verify process is performed to determine which of the non-volatile storage element have reached an intermediate verify threshold but have not reached a final verify threshold. One additional programming operation at a reduced level is performed for the non-volatile storage elements that have reached the intermediate verify threshold but have not reached the final verify threshold, and those non-volatile storage elements are then inhibited from further programming. Non-volatile storage elements that have not reached the intermediate verify threshold continue programming. Non-volatile storage elements that reach the final verify threshold are inhibited from programming.
公开/授权文献
- EP1711950B1 PROGRAMMING NON-VOLATILE MEMORY 公开/授权日:2007-12-19
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