发明公开
EP1712893A1 Planar resonant tunneling sensor and method of fabricating and using same
审中-公开
Flacher传感器电感共鸣器Tunneleffekt und dessen Herstellungs- und Anwendungsverfahren。
- 专利标题： Planar resonant tunneling sensor and method of fabricating and using same
- 专利标题（中）： Flacher传感器电感共鸣器Tunneleffekt und dessen Herstellungs- und Anwendungsverfahren。
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申请号： EP05023694.2申请日： 2005-10-28
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公开(公告)号： EP1712893A1公开(公告)日： 2006-10-18
- 发明人: Barth, Philip W. , Stein, Derek , Flory, Curt , Pittaro, Rick , Roitman, Daniel
- 申请人： Agilent Technologies, Inc., A Delaware Corporation
- 申请人地址： 395 Page Mill Road Palo Alto, CA 94306 US
- 专利权人： Agilent Technologies, Inc., A Delaware Corporation
- 当前专利权人： Agilent Technologies, Inc., A Delaware Corporation
- 当前专利权人地址： 395 Page Mill Road Palo Alto, CA 94306 US
- 代理机构： Schoppe, Fritz
- 优先权： US107996 20050414
- 主分类号： G01N15/10
- IPC分类号： G01N15/10 ; G01N27/00 ; G01N13/12 ; G12B21/04
摘要：
Planar resonant tunneling sensor devices and methods for using the same are provided. The subject devices include first 103 and second 105 electrodes present on a surface of a planar substrate 101 and separated from each other by a nanodimensioned gap 106. The devices also include a first member 107 for holding a sample, and a second member for moving the first member and planar resonant tunneling electrode relative to each other. Also provided are methods of fabricating such a device and methods of using such a device for improved detection and characterization of a sample.
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