发明公开
EP1719736A1 Polycrystalline silicon, method and apparatus for producing the same
有权
Vorrichtung zur Herstellung polykristallines Silizium
- 专利标题: Polycrystalline silicon, method and apparatus for producing the same
- 专利标题(中): Vorrichtung zur Herstellung polykristallines Silizium
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申请号: EP06016763.2申请日: 2001-05-09
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公开(公告)号: EP1719736A1公开(公告)日: 2006-11-08
- 发明人: Wakamatsu, Satoru , Oda, Hiroyuki
- 申请人: TOKUYAMA CORPORATION
- 申请人地址: 1-1 Mikage-cho Shunan-shi, Yamaguchi 745-0053 JP
- 专利权人: TOKUYAMA CORPORATION
- 当前专利权人: TOKUYAMA CORPORATION
- 当前专利权人地址: 1-1 Mikage-cho Shunan-shi, Yamaguchi 745-0053 JP
- 代理机构: Cresswell, Thomas Anthony
- 优先权: JP2000139023 20000511
- 主分类号: C01B33/02
- IPC分类号: C01B33/02 ; C01B33/035 ; B01J19/24 ; B01J4/00 ; B01J10/00 ; C01B33/027
摘要:
Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm 3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.
公开/授权文献
- EP1719736B1 Apparatus for producing polycrystalline silicon 公开/授权日:2010-08-11
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