发明公开
EP1731952A1 Deep quantum well electro-absorption modulator
审中-公开
Elektroabsorptionsmodulator mit tiefem Quantentopf
- 专利标题: Deep quantum well electro-absorption modulator
- 专利标题(中): Elektroabsorptionsmodulator mit tiefem Quantentopf
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申请号: EP06011295.0申请日: 2006-05-31
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公开(公告)号: EP1731952A1公开(公告)日: 2006-12-13
- 发明人: Bour, David P. , Tandon, Ashish , Tan, Michael R.T.
- 申请人: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- 申请人地址: 1 Yishun Avenue 7 Singapore 768923 SG
- 专利权人: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- 当前专利权人: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- 当前专利权人地址: 1 Yishun Avenue 7 Singapore 768923 SG
- 代理机构: Schoppe, Fritz
- 优先权: US148467 20050608
- 主分类号: G02F1/017
- IPC分类号: G02F1/017
摘要:
Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
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