Deep quantum well electro-absorption modulator
    3.
    发明公开
    Deep quantum well electro-absorption modulator 审中-公开
    Elektroabsorptionsmodulator mit tiefem Quantentopf

    公开(公告)号:EP1731952A1

    公开(公告)日:2006-12-13

    申请号:EP06011295.0

    申请日:2006-05-31

    IPC分类号: G02F1/017

    摘要: Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

    摘要翻译: 通过嵌入深超薄量子阱,在量子阱活性区域中产生电吸收调制器中的双阱结构。 以常规量子阱为中心的嵌入式,超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态,并且通常导致空穴和电子分布更局限于常规量子的中心 好。 由电吸收式调制器提供的消光比通常增加。