A method for depositing an in situ doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 80 torr in a process chamber housing a patterned substrate. The method further comprises providing a flow of dichlorosilane to the process chamber. The method further comprises providing a flow of a dopant hydride to the process chamber. The method further comprises selectively depositing the epitaxial semiconductor layer on single crystal material on the patterned substrate at a rate of greater than about 3 nm min-1.