发明公开
EP1746722A2 Film bulk acoustic wave resonator and manufacturing method thereof
审中-公开
Dünnschicht-Volumenwellen-Resonator（FBAR）和sein Herstellungsverfahren
- 专利标题： Film bulk acoustic wave resonator and manufacturing method thereof
- 专利标题（中）： Dünnschicht-Volumenwellen-Resonator（FBAR）和sein Herstellungsverfahren
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申请号： EP06253526.5申请日： 2006-07-05
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公开(公告)号： EP1746722A2公开(公告)日： 2007-01-24
- 发明人: Kim, Duck-hwan , Park, Yun-kwon , Kim, Chul-soo , Sul, Sang-chul , Ha, Byeoung-ju , Song, In-sang
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： 416 Maetan-Dong Yeongtong-Gu Suwon-si, Gyeonggi-Do KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： 416 Maetan-Dong Yeongtong-Gu Suwon-si, Gyeonggi-Do KR
- 代理机构： Ertl, Nicholas Justin
- 优先权： KR20050064803 20050718
- 主分类号： H03H9/17
- IPC分类号： H03H9/17
摘要：
A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).
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