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7 条记录 (耗时 0.011 秒)

    Film bulk acoustic wave resonator and manufacturing method thereof
    1.
    发明公开
    Film bulk acoustic wave resonator and manufacturing method thereof 审中-公开
    Dünnschicht-Volumenwellen-Resonator（FBAR）和sein Herstellungsverfahren

    公开(公告)号：EP1746722A2

    公开(公告)日：2007-01-24

    申请号：EP06253526.5

    申请日：2006-07-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kim, Duck-hwan ,  Park, Yun-kwon ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Ha, Byeoung-ju ,  Song, In-sang

    IPC分类号： H03H9/17

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02118

    摘要： A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).

    摘要翻译： 薄膜体声波谐振器包括基板（101）; 形成在所述基板（101）的顶部上的下电极（110）; 形成在所述下电极（110）的顶部并且具有如下倾斜的结晶轴（CC）的压电膜（113），以便当声波向所述下电极（110）前进时产生全反射; 以及形成在所述压电膜（113）的顶部上的上电极（115）。 压电膜（113）的圆周可以包括可以在与形成上电极（115）的层相同的层上被图案化的包封壁（117）。

    Monolithic duplexer and fabrication method thereof
    5.
    发明公开
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器和过程及其制备

    公开(公告)号：EP1750370A3

    公开(公告)日：2008-09-17

    申请号：EP06253822.8

    申请日：2006-07-20

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sul, Sang-chul, 901-406 Byeokjeokgol ,  Kim, Chul-soo ,  Kim, Duck-hwan, 505-803 Hosu-maeul ,  Song, In-sang ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Shin, Jea-shik

    IPC分类号： H03H9/10 ,  H03H3/02

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer (10), a plurality of elements (1a,1b,1c,1d) distanced from each other on a top portion of a device wafer, first sealing parts (30) formed on the top portion of the device wafer, and a plurality of first ground planes (20) formed between the plurality of elements. A cap wafer (40) is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts (42), and cavities. Second sealing parts (48) are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes (46) cover the plurality of ground posts. Via holes (50) vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals (60) are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    Monolithic duplexer and fabrication method thereof
    6.
    发明公开
    Monolithic duplexer and fabrication method thereof 有权
    Monolithischer Duplexer和Verfahren zu seiner Herstellung

    公开(公告)号：EP1750370A2

    公开(公告)日：2007-02-07

    申请号：EP06253822.8

    申请日：2006-07-20

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sul, Sang-chul, 901-406 Byeokjeokgol ,  Kim, Chul-soo ,  Kim, Duck-hwan, 505-803 Hosu-maeul ,  Song, In-sang ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Shin, Jea-shik

    IPC分类号： H03H9/10 ,  H03H3/02

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer (10), a plurality of elements (1a,1b,1c,1d) distanced from each other on a top portion of a device wafer, first sealing parts (30) formed on the top portion of the device wafer, and a plurality of first ground planes (20) formed between the plurality of elements. A cap wafer (40) is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts (42), and cavities. Second sealing parts (48) are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes (46) cover the plurality of ground posts. Via holes (50) vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals (60) are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    摘要翻译： 一种单片双工器及其制造方法。 单片双工器包括器件晶片（10），在器件晶片的顶部彼此远离的多个元件（1a，1b，1c，1d），形成在器件晶片的顶部上的第一密封部分（30） 器件晶片和形成在多个元件之间的多个第一接地平面（20）。 还提供了具有用于封装器件晶片，多个突出部分，多个接地柱（42）和空腔的蚀刻区域的盖片（40）。 第二密封部（48）形成在突出部的底部，多个第二接地面（46）覆盖多个接地柱。 通孔（50）垂直地穿过盖晶片以连接到多个第二接地平面，并且接地端子（60）形成在通孔的顶部上。 第一密封部件和第一接地平面分别附接到第二密封部件和第二接地平面。

    Integrated filter including FBAR and SAW resonator and fabrication method therefor
    7.
    发明公开
    Integrated filter including FBAR and SAW resonator and fabrication method therefor 审中-公开
    用Dünnschichtvolumenwellenresonator，表面声波谐振器及其制造方法集成滤波

    公开(公告)号：EP1748557A2

    公开(公告)日：2007-01-31

    申请号：EP06012762.8

    申请日：2006-06-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Nam, Kuang-woo ,  Sunwoo, Kook-hyun ,  Song, In-sang ,  Kwon, Sang-wook ,  Kim, Duck-hwan ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Park, Yun-kwon ,  Park, Hae-seok ,  Shin, Jea-shik ,  Shim, Dong-ha ,  Hong, Young-tack ,  Kim, Jong-seok ,  Chang, Seok-mo ,  Yun, Seok-chul

    IPC分类号： H03H9/58 ,  H03H3/02

    CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

    摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

    摘要翻译： 集成滤波器包括薄膜体声谐振器（FBAR）和表面声波（SAW）谐振器和制造该集成滤波器的方法。 该集成滤波器包括：衬底（110）; 在预定的第一电极（120）定位在所述基板的上表面的第一区域; 定位在所述第一电极上的第一压电体层（130）; 定位在所述第一压电层上的第二电极（150）; 在上基底的上表面的预定第二区域设置的第二压电体层（140）; 和至少一个叉指式换能器（IDT）电极（160,170）定位在所述第二压电体层上。 IDT电极包括：在所述第二压电体层上的梳状结构形成的第一IDT电极（160）; 和在梳状结构形成的第二压电层上的第二IDT电极（170），以便与所述第一IDT电极啮合。 所述第一和第二压电层中形成的相同材料构成。 因此，为了集成滤波器在各频段其操作变得紧凑。