发明公开
- 专利标题: Solid-state imaging device
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申请号: EP06023938.1申请日: 2002-03-14
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公开(公告)号: EP1755166A3公开(公告)日: 2007-02-28
- 发明人: Iizuka, Takayuki , Yamashita, Mitsuru
- 申请人: SONY CORPORATION
- 申请人地址: 7-35, Kitashinagawa 6-chome, Shinagawa-ku Tokyo JP
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: 7-35, Kitashinagawa 6-chome, Shinagawa-ku Tokyo JP
- 代理机构: Müller - Hoffmann & Partner
- 优先权: JP2001078506 20010319
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L27/146 ; H01L29/768
摘要:
Signal charges generated by a plurality of photoelectric conversion elements are transferred to first and second horizontal charge transfer registers via corresponding vertical charge transfer registers. The first and second horizontal charge transfer registers transfer the signal charges to first and second output portions, respectively. The first and second output portions convert the signal charges into voltages. The first and second output portions respectively include first and second signal charge detectors, first and second transistors each having a source, a drain, and a gate, and first and second charge sweeping regions, each having a charge sweeping control gate and a charge sweeping drain. The first signal charge detector, the source, the drain, and the gate of the first transistor, and the charge sweeping control gate and the charge sweeping drain of the first charge sweeping region are almost congruent to the second signal charge detector, the source, the drain, and the gate of the second transistor, and the charge sweeping control gate and the charge sweeping drain of the second charge sweeping region, and the former components are overlaid almost completely on the latter components by a translational movement.
公开/授权文献
- EP1755166A2 Solid-state imaging device 公开/授权日:2007-02-21
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