发明公开
- 专利标题： PROCEDE DE METALLISATION DE LA SURFACE PREALABLEMENT PASSIVEE D'UN MATERIAU SEMICONDUCTEUR ET MATERIAU OBTENU PAR CE PROCEDE
- 专利标题（英）： Method for metallizing the previously passivated surface of a semiconductor material and resulting material
- 专利标题（中）： 工艺半导体材料的以前的金属化表面钝化，因此生产的材料
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申请号： EP05778242.7申请日： 2005-06-20
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公开(公告)号： EP1759406A1公开(公告)日： 2007-03-07
- 发明人: RADTKE, Claudio , SILLY, Mathieu , SOUKIASSIAN, Patrick , ENRIQUEZ, Hanna
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE , UNIVERSITE PARIS-SUD (PARIS XI)
- 申请人地址： 25, rue Leblanc Immeuble "Le Ponant D" 75015 Paris FR
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE,UNIVERSITE PARIS-SUD (PARIS XI)
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE,UNIVERSITE PARIS-SUD (PARIS XI)
- 当前专利权人地址： 25, rue Leblanc Immeuble "Le Ponant D" 75015 Paris FR
- 代理机构： Poulin, Gérard
- 优先权： FR0406751 20040621
- 国际公布： WO2006005869 20060119
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/04
摘要：
The invention concerns a method for metallizing the previously passivated surface of a semiconductor material and resulting material. The invention, which is applicable in microelectronics, is characterized in that it consists in: preparing the surface of the material (2) so that it contains bonds capable of absorbing hydrogen atoms or a metal element, passivating one or more layers, preferably immediately underlying the surface, by exposing same to a passivating compound, and metallizing the surface (4) by exposing same to hydrogen atoms or the metal element.
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