专利检索 ap:("COMMISSARIAT A L'ENERGIE ATOMIQUE" OR "UNIVERSITE PARIS-SUD (PARIS XI)") AND inv:"ENRIQUEZ, Hanna" 第 1 页

1.

发明公开
PROCEDE DE METALLISATION DE LA SURFACE PREALABLEMENT PASSIVEE D'UN MATERIAU SEMICONDUCTEUR ET MATERIAU OBTENU PAR CE PROCEDE 审中-公开
标题翻译：工艺半导体材料的以前的金属化表面钝化，因此生产的材料

公开(公告)号：EP1759406A1

公开(公告)日：2007-03-07

申请号：EP05778242.7

申请日：2005-06-20

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE , UNIVERSITE PARIS-SUD (PARIS XI)

发明人： RADTKE, Claudio , SILLY, Mathieu , SOUKIASSIAN, Patrick , ENRIQUEZ, Hanna

IPC分类号： H01L21/285 , H01L21/04

CPC分类号： H01L21/28512 , H01L21/045 , H01L21/0485 , H01L2924/0002 , Y10T428/31678 , H01L2924/00

摘要： The invention concerns a method for metallizing the previously passivated surface of a semiconductor material and resulting material. The invention, which is applicable in microelectronics, is characterized in that it consists in: preparing the surface of the material (2) so that it contains bonds capable of absorbing hydrogen atoms or a metal element, passivating one or more layers, preferably immediately underlying the surface, by exposing same to a passivating compound, and metallizing the surface (4) by exposing same to hydrogen atoms or the metal element.