发明授权
- 专利标题： VERFAHREN ZUR ABSCHEIDUNG VON SILIZIUM UND GERMANIUM ENTHALTENDEN SCHICHTEN
- 专利标题（英）： Method for the deposition of layers containing silicon and germanium
- 专利标题（中）： 工艺用于硅的分离和锗含有层
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申请号： EP05716765.2申请日： 2005-02-22
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公开(公告)号： EP1774056B1公开(公告)日： 2011-05-18
- 发明人: SCHUMACHER, Marcus , BAUMANN, Peter , LINDNER, Johannes , MCENTEE, Timothy
- 申请人： Aixtron SE
- 申请人地址： Kaiserstrasse 98 52134 Herzogenrath DE
- 专利权人： Aixtron SE
- 当前专利权人： Aixtron SE
- 当前专利权人地址： Kaiserstrasse 98 52134 Herzogenrath DE
- 代理机构： Grundmann, Dirk
- 优先权： DE102004034103 20040715
- 国际公布： WO2006005637 20060119
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; C30B29/52
摘要：
The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.
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