公开(公告)号：EP1774056B1

公开(公告)日：2011-05-18

申请号：EP05716765.2

申请日：2005-02-22

申请人： Aixtron SE

发明人： SCHUMACHER, Marcus ,  BAUMANN, Peter ,  LINDNER, Johannes ,  MCENTEE, Timothy

IPC分类号： C23C16/30 ,  C30B29/52

CPC分类号： C30B29/52 ,  C30B25/02 ,  C30B25/14

摘要： The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.