发明公开
EP1774577A2 SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES
审中-公开
VERFAHREN ZUR HERSTELLUNG VON SILIKONREICHEN OHMSCHEN镍 - 硅胶 - KONTAKTENFÜRSIC-HALBLEITERVORRICHTUNGEN
- 专利标题： SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG VON SILIKONREICHEN OHMSCHEN镍 - 硅胶 - KONTAKTENFÜRSIC-HALBLEITERVORRICHTUNGEN
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申请号： EP05803665.8申请日： 2005-06-30
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公开(公告)号： EP1774577A2公开(公告)日： 2007-04-18
- 发明人: WARD, Alan, III , HENNING, Jason, Patrick , HAGLEITNER, Helmut , WIEBER, Keith, Dennis
- 申请人： CREE, INC.
- 申请人地址： 4600 Silicon Drive Durham, North Carolina 27703-8475 US
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： 4600 Silicon Drive Durham, North Carolina 27703-8475 US
- 代理机构： Bankes, Stephen Charles Digby
- 优先权： US884930 20040706
- 国际公布： WO2006014346 20060209
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/45
摘要：
A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.
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