发明公开
- 专利标题： METHOD OF MANUFACTURING A SILICON DIOXIDE LAYER
- 专利标题（中）： 工艺用于生产SILIZIUMDIOXIDENSCHICHT
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申请号： EP04765971.9申请日： 2004-09-16
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公开(公告)号： EP1789999A1公开(公告)日： 2007-05-30
- 发明人: BOURDELLE, Konstantin , DAVAL, Nicolas , CAYREFOURCQ, Ian , VAN AERDE, Steven, R., A. , DE BLANK, Marinus, J. , VAN DER JEUGD, Cornelius, A.
- 申请人： S.O.I.Tec Silicon on Insulator Technologies , ASM INTERNATIONAL N.V.
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies,ASM INTERNATIONAL N.V.
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies,ASM INTERNATIONAL N.V.
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 代理机构： Bomer, Françoise Marie
- 国际公布： WO2006029651 20060323
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/762
摘要：
The invention relates to a of manufacturing a silicon dioxide layer (2) of low roughness, comprising the step of: - depositing a layer of silicon dioxide (2) over a substrate (1) by a low pressure chemical vapour deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas / TEOS flow ratio is between 0.5 and 100; - annealing said silicon dioxide layer at a temperature between 600°C and 1200°C, for a duration between 10 minutes and 6 hours.
公开/授权文献
- EP1789999B1 METHOD OF MANUFACTURING A SILICON DIOXIDE LAYER 公开/授权日：2017-06-07
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