公开(公告)号：EP1789999A1

公开(公告)日：2007-05-30

申请号：EP04765971.9

申请日：2004-09-16

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  ASM INTERNATIONAL N.V.

发明人： BOURDELLE, Konstantin ,  DAVAL, Nicolas ,  CAYREFOURCQ, Ian ,  VAN AERDE, Steven, R., A. ,  DE BLANK, Marinus, J. ,  VAN DER JEUGD, Cornelius, A.

IPC分类号： H01L21/316 ,  H01L21/762

CPC分类号： H01L21/31612 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271

摘要： The invention relates to a of manufacturing a silicon dioxide layer (2) of low roughness, comprising the step of: - depositing a layer of silicon dioxide (2) over a substrate (1) by a low pressure chemical vapour deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas / TEOS flow ratio is between 0.5 and 100; - annealing said silicon dioxide layer at a temperature between 600°C and 1200°C, for a duration between 10 minutes and 6 hours.

公开(公告)号：EP1789999B1

公开(公告)日：2017-06-07

申请号：EP04765971.9

申请日：2004-09-16

申请人： Soitec ,  ASM INTERNATIONAL N.V.

发明人： BOURDELLE, Konstantin ,  DAVAL, Nicolas ,  CAYREFOURCQ, Ian ,  VAN AERDE, Steven, R., A. ,  DE BLANK, Marinus, J. ,  VAN DER JEUGD, Cornelius, A.

IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/316

CPC分类号： H01L21/31612 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271