发明公开
EP1835341A1 Positive resist composition and pattern forming method using the same
有权
积极的抵抗力和威尔法罕zur Strukturformung damit
- 专利标题： Positive resist composition and pattern forming method using the same
- 专利标题（中）： 积极的抵抗力和威尔法罕zur Strukturformung damit
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申请号： EP07005155.2申请日： 2007-03-13
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公开(公告)号： EP1835341A1公开(公告)日： 2007-09-19
- 发明人: Mizutani, Kazuyoshi , Iwato, Kaoru , Kodama, Kunihiko , Makino, Masaomi
- 申请人： FUJIFILM Corporation
- 申请人地址： 26-30, Nishiazabu 2-chome Minato-ku Tokyo JP
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： 26-30, Nishiazabu 2-chome Minato-ku Tokyo JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2006069383 20060314
- 主分类号： G03F7/039
- IPC分类号： G03F7/039
摘要：
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:
wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
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