发明公开
EP1837905A2 Interconnect structure having cavities in its dielectric portion
审中-公开
Verbindungsstruktur mitHohlräumenim Dielektrikum
- 专利标题: Interconnect structure having cavities in its dielectric portion
- 专利标题(中): Verbindungsstruktur mitHohlräumenim Dielektrikum
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申请号: EP07112163.6申请日: 2006-06-21
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公开(公告)号: EP1837905A2公开(公告)日: 2007-09-26
- 发明人: Torres, Joaquin , Gosset, Laurent-Georges
- 申请人: STMicroelectronics (Crolles 2) SAS , Koninklijke Philips Electronics N.V.
- 申请人地址: 850, rue Jean Monnet 38920 Crolles FR
- 专利权人: STMicroelectronics (Crolles 2) SAS,Koninklijke Philips Electronics N.V.
- 当前专利权人: STMicroelectronics (Crolles 2) SAS,Koninklijke Philips Electronics N.V.
- 当前专利权人地址: 850, rue Jean Monnet 38920 Crolles FR
- 代理机构: Cabinet Plasseraud
- 优先权: EP05291505 20050712
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
The present invention provides an improved integrated circuit and integrated circuit fabrication method to introduce highly controlled air cavities within high-speed copper interconnects based on the introduction of a polymer material on the edges of the interconnect lines and vias within the interconnect stack, which incorporates and controls air cavities formation, thus enhancing the signal propagation performances of the semiconductor interconnects.
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