发明公开
- 专利标题： DIAMOND MEDICAL DEVICES
- 专利标题（中）： 医疗设备金刚石
-
申请号： EP06717944.0申请日： 2006-01-11
-
公开(公告)号： EP1842227A2公开(公告)日： 2007-10-10
- 发明人: Apollo Diamond, Inc. , Linares, Robert C. , Doering, Patrick J. , Linares, Bryant , Genis, Alfred R. , Dromeshauser, William W. , Murray, Michael , Abrahams, John M. , Novak, Alicia E.
- 申请人： Apollo Diamond, Inc. , Linares, Robert C. , Doering, Patrick J. , Linares, Bryant , Genis, Alfred R. , Dromeshauser, William W. , Murray, Michael , Abrahams, John M. , Novak, Alicia E.
- 申请人地址： P.O. Box 670 Framingham, MA 01704 US
- 专利权人： Apollo Diamond, Inc.,Linares, Robert C.,Doering, Patrick J.,Linares, Bryant,Genis, Alfred R.,Dromeshauser, William W.,Murray, Michael,Abrahams, John M.,Novak, Alicia E.
- 当前专利权人： Apollo Diamond, Inc.,Linares, Robert C.,Doering, Patrick J.,Linares, Bryant,Genis, Alfred R.,Dromeshauser, William W.,Murray, Michael,Abrahams, John M.,Novak, Alicia E.
- 当前专利权人地址： P.O. Box 670 Framingham, MA 01704 US
- 代理机构： Bergquist, Kjell Gunnar
- 优先权： US643390P 20050111; US56338 20050211; US178623 20050711
- 国际公布： WO2006076354 20060720
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; B81B1/00 ; B81C1/00 ; C30B25/02
摘要：
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.
信息查询
IPC分类:
