An electro-optical device includes a thin-film transistor that has a gate electrode, a gate insulating layer, and a semiconductor layer laminated in each of a plurality of pixel regions on an element substrate, a pixel electrode that is electrically connected to a drain region of the thin-film transistor, and a storage capacitor that has a lower electrode and an upper electrode facing each other with the gate insulating layer interposed therebetween. In the thin-film transistor, the gate electrode, the gate insulating layer, and the semiconductor layer are laminated sequentially in that order. The gate insulating layer includes a lower gate insulating layer having one or a plurality of insulating films, and an upper gate insulating layer having one or a plurality of insulating films. The lower gate insulating layer is formed to have a thickness sufficient to reduce parasitic capacitance of the thin-film transistor, and a portion of the lower gate insulating layer where the lower electrode and the upper electrode overlap each other is removed.